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CEF540L Datasheet Preview

CEF540L Datasheet

N-Channel MOSFET

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CEP540L/CEB540L
CEF540L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 50m@VGS = 10V.
RDS(ON) = 53m@VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 36
IDM 120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
140
0.91
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 310
IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.1
62.5
Units
C/W
C/W
.
Details are subject to change without notice .
1
Rev .1 2010.April.
http://www.cet-mos.com




CET

CEF540L Datasheet Preview

CEF540L Datasheet

N-Channel MOSFET

No Preview Available !

CEP540L/CEB540L
CEF540L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
VGS = 10V, ID = 18A
VGS = 5V, ID = 15A
VDS = 25V, ID = 18A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 18A,
VGS = 10V, RGEN = 5.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 18A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 18A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Min
100
1
Typ Max Units
25
100
-100
V
µA
nA
nA
3V
40 50 m
43 53 m
14 S
1295
199
40
pF
pF
pF
13 26 ns
3.1 7 ns
55 110 ns
5 10 ns
40 80 nC
3.7 nC
10 nC
36 A
1.3 V
2


Part Number CEF540L
Description N-Channel MOSFET
Maker CET
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CEF540L Datasheet PDF






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