CEG8205A transistor equivalent, dual n-channel enhancement mode field effect transistor.
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capabi.
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