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CEG8208 - Dual N-Channel MOSFET

Key Features

  • 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V G2 S2 S2 D TSSOP-8 G1 S1 S1 D D.
  • 1K G1.
  • 1K G2 S1.
  • Typical value by design D1 S1 2 S1 3 G1 4.

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Datasheet Details

Part number CEG8208
Manufacturer CET
File Size 389.85 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet CEG8208 Datasheet

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Full PDF Text Transcription (Reference)

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CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V G2 S2 S2 D TSSOP-8 G1 S1 S1 D D *1K G1 *1K G2 S1 *Typical value by design D1 S1 2 S1 3 G1 4 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.5 IDM 25 Maximum Power Dissipation PD 1.