CEH2305 transistor equivalent, p-channel enhancement mode field effect transistor.
-30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 119mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliab.
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