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Single N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 2.6A, RDS(ON) = 180mΩ @VGS = 10V.
CEM0310
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
SO-8 1
1 S 2 S 3 S 4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 100 Units V V A A W C
±20
2.6 10.4 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
Details are subject to change without notice .
CEM0310 Datasheet
