900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CET

CEM2163 Datasheet Preview

CEM2163 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM2163
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -8.9A, RDS(ON) = 20m@VGS = -4.5V.
RDS(ON) = 30m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -20
VGS ±12
ID -8.9
IDM -36
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2010.Oct
http://www.cet-mos.com




CET

CEM2163 Datasheet Preview

CEM2163 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM2163
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -12V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -7.6A
VGS = -2.5V, ID = -6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -6V, ID = -7A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.4
Typ
15
22
2805
505
395
20
18
89
49
31.5
3.8
8.8
Max Units
-1
100
-100
V
µA
nA
nA
-1.3 V
20 m
30 m
pF
pF
pF
40 ns
36 ns
178 ns
98 ns
41 nC
nC
nC
-2 A
-1.2 V
2


Part Number CEM2163
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
PDF Download

CEM2163 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 CEM2163 P-Channel Enhancement Mode Field Effect Transistor
CET





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy