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CET
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CEM3083 Datasheet Preview

CEM3083 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CEM3083 pdf
CEM3083
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -13A, RDS(ON) = 10m@VGS = -10V.
RDS(ON) = 15.5m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -13
IDM -52
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2007.Jun.
http://www.cet-mos.com



CET
CET

CEM3083 Datasheet Preview

CEM3083 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM3083 pdf
CEM3083
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS , ID = -250µA
VGS = -10V, ID = -13A
VGS = -4.5V, ID = -10A
VDS = -15V, ID = -13A
VDS = -15V, VGS = 0V,
f = 1MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -15V, ID = -13A,
VGS = -10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -15V, ID = -13A,
VGS = -5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -1.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-30
-1
Typ
8
12.5
40
3450
465
365
18.8
11.2
132
63
37.9
9.6
13.3
Max Units
-1
100
-100
V
µA
nA
nA
-3 V
10 m
15.5 m
S
pF
pF
pF
37.6 ns
22.4 ns
264 ns
126 ns
50 nC
nC
nC
-1.3 A
-1.1 V
5
2


Part Number CEM3083
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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