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CEM4063 - p-

Key Features

  • -40V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 14mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

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Datasheet Details

Part number CEM4063
Manufacturer CET
File Size 385.02 KB
Description p-
Datasheet download datasheet CEM4063 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEM4063 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 14mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -40 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -13 IDM -52 Maximum Power Dissipation PD 2.