CEM4282 transistor equivalent, n-channel enhancement mode field effect transistor.
40V, 6.6A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 48mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
D D 7.
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