CEM6355 - p-

CET

Key Features

-60V, -6A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

Datasheet Details

Part number	CEM6355
Manufacturer	CET
File Size	353.28 KB
Description	p-
Datasheet	CEM6355 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEM6355 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -6A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -6 IDM -24 Maximum Power Dissipation PD 2.