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CEM9407A
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -3.7A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 165mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
DD D D 8 7 65
5
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID -3.7 IDM -14.8
Maximum Power Dissipation
PD 2.
CEM9407A Datasheet
