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CEP50N10 Datasheet Preview

CEP50N10 Datasheet

N-Channel MOSFET

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CEP50N10/CEB50N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 50A, RDS(ON) = 30m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±25
Drain Current-Continuous
Drain Current-Pulsed a
ID 50
IDM 200
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
136
0.91
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
397
43.5
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.1
62.5
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Aug
http://www.cet-mos.com




CET

CEP50N10 Datasheet Preview

CEP50N10 Datasheet

N-Channel MOSFET

No Preview Available !

CEP50N10/CEB50N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 25A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 5A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 37A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 40A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.42mH, IAS = 43.5A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Min
100
2
Typ
25
1955
300
35
27
19
185
35
49
10
16
Max Units
1
100
-100
V
µA
nA
nA
4V
30 m
pF
pF
pF
54 ns
38 ns
370 ns
70 ns
65 nC
nC
nC
50 A
1.5 V
2


Part Number CEP50N10
Description N-Channel MOSFET
Maker CET
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