CEP6601 Description
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor.
CEP6601 Key Features
- 60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V
CEP6601 is P-Channel MOSFET manufactured by CET.
CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor.