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CEP740G Datasheet Preview

CEP740G Datasheet

N-Channel MOSFET

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CEP740G/CEB740G
CEF740G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP740G
CEB740G
VDSS
400V
400V
CEF740G
400V
RDS(ON)
0.55
0.55
0.55
ID
10A
10A
10A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VGS ±30
ID 10 10 e
IDM f
40 40 e
125 40
PD
1.0 0.32
Single Pulsed Avalanche Energy g
EAS 400
Single Pulsed Avalanche Current g
IAS 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
62.5
3.1
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2007.Nov.
http://www.cet-mos.com




CET

CEP740G Datasheet Preview

CEP740G Datasheet

N-Channel MOSFET

No Preview Available !

CEP740G/CEB740G
CEF740G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 400V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 200V, ID = 10A,
VGS = 10V, RGEN = 9.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 320V, ID = 10A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 10A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 5.5A .
g.L = 8mH, IAS =10A, VDD = 50V, RG = 25, Starting TJ = 25 C
Min
400
2
Typ
450
1245
190
25
20
9
50
8
35.6
6.7
12
Max Units
50
100
-100
V
µA
nA
nA
4V
550 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
10 A
2V
2


Part Number CEP740G
Description N-Channel MOSFET
Maker CET
PDF Download

CEP740G Datasheet PDF





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