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CEP75N06G Datasheet Preview

CEP75N06G Datasheet

N-Channel MOSFET

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CEP75N06G/CEB75N06G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 75A, RDS(ON) = 13m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 60
VGS ±20
ID
75
53
IDM 300
150
PD 1
EAS
IAS
TJ,Tstg
360
30
-65 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2012.May
http://www.cet-mos.com




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CEP75N06G Datasheet Preview

CEP75N06G Datasheet

N-Channel MOSFET

No Preview Available !

CEP75N06G/CEB75N06G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 35A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 15A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 75A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 35A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.8mH, IAS = 30A, VDD = 30V, RG = 25Ω, Starting TJ = 25 C
Min
60
2
Typ
11
2015
495
55
22
17
47
18
52
11
18
Max Units
1
100
-100
V
µA
nA
nA
4V
13 m
pF
pF
pF
44 ns
34 ns
94 ns
36 ns
68 nC
nC
nC
75 A
1.3 V
2


Part Number CEP75N06G
Description N-Channel MOSFET
Maker CET
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CEP75N06G Datasheet PDF





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