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CEU06N7 Datasheet Preview

CEU06N7 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEU06N7 pdf
CED06N7/CEU06N7
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
700V, 5A, RDS(ON) = 2@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 700
VGS ±30
Drain Current-Continuous
Drain Current-Pulsed a
ID 5
IDM 20
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
107
0.7
Single Pulsed Avalanche Energy e
EAS 125
Single Pulsed Avalanche Current e
IAS 5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.4
50
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2012.July
http://www.cetsemi.com



CET
CET

CEU06N7 Datasheet Preview

CEU06N7 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU06N7 pdf
CED06N7/CEU06N7
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.5A
Gate input resistance
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Rg
Ciss
Coss
Crss
f=1MHz,open Drain
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 560V, ID = 5A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 560V, ID = 5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Device Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 10mH, IAS =5A, VDD = 50V, RG = 25, Starting TJ = 25 C
Min
700
2
Typ
1.65
2
1470
110
15
27
73
87
79
29
5
9
Max Units
1
100
-100
V
µA
nA
nA
4V
2
pF
pF
pF
54 ns
146 ns
174 ns
158 ns
38 nC
nC
nC
5A
1.5 V
2


Part Number CEU06N7
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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