datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





CET
CET

CEU4259 Datasheet Preview

CEU4259 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU4259 pdf
CEU4259
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V , 14A , RDS(ON) = 32m@VGS = 10V.
RDS(ON) = 46m@VGS = 4.5V.
-40V , -12A , RDS(ON) = 43m@VGS = 10V.
RDS(ON) = 65m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead free product is acquired.
TO-252-5L package.
S1
G1
D1/D2
S2
G2
D1/D2
CEU SERIES
TO-252-5L
D1/D2
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous e
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 40 40
VGS ±20 ±20
ID e 14 -12
IDM 56 -48
10.4
PD 0.08
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
12
50
Units
C/W
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com



CET
CET

CEU4259 Datasheet Preview

CEU4259 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU4259 pdf
CEU4259
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS c
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7A
VGS = 4.5V, ID = 5A
1
3V
25 32 m
35 46 m
VDS = 10V, ID = 7A
VDS = 20V, VGS = 0V,
f = 1.0 MHz
3
1050
155
95
S
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 20V, ID = 6A,
VGS = 10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 20V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1.0A
14 30
10 20
17 35
18 35
20.5 27
3.5
4.0
ns
ns
ns
ns
nC
nC
nC
8A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.
2


Part Number CEU4259
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 7 Pages
PDF Download
CEU4259 pdf
CEU4259 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 CEU4259 N-Channel Enhancement Mode Field Effect Transistor CET
CET
CEU4259 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy