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CM3400 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

PWM applications Load switch Power manageme

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Datasheet Details

Part number CM3400
Manufacturer CHIMICRON SEMICONDUCTOR
File Size 778.21 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet CM3400 Datasheet
Additional preview pages of the CM3400 datasheet.

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    CM3400 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±12VGS/5.8A(ID) Part No CM3400 Description The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application ●PWM applications ●Load switch ●Power management Product Summary VDS=30V ID= 5.8A RDS(ON)< 59mΩ@ VGS=2.5V RDS(ON)< 45mΩ@ VGS=4.5V RDS(ON)< 41mΩ@ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±12 Continuous Current Drain ID 5.8 Pulsed Drain Current(Note 1) IDM 30 Power Description PD 1.
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