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1N60P Datasheet

SILICON SCHOTTKY BARRIER DIODE

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1N60P, 1N60S
SILICON SCHOTTKY BARRIER DIODE
Characteristics equivalent to
1N60P and 1N60S
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
3.9 max
R5 max
10.0± 1.0
1.0 max
Glass case DO-35-1
Dimensions in mm
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Symbol
VRM
VR
IO
IFM
Isurge
Tj
TS
Value
45
20
50
150
500
175
- 55 to + 175
Unit
V
V
mA
mA
mA
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Current
at VF = 1 V
Reverse Current
at VR = 10 V
1N60P
1N60S
Junction Capacitance
at f = 1 MHz, V = -1 V
Rectification efficiency
at Vi = 2 Vrms, R = 5 K, C = 20 pF, f = 40 MHz
Symbol
IF
IR
C
η
Min.
4
-
-
-
55
Max.
-
50
100
1
-
Unit
mA
µA
pF
%
~~~ output
Input 2Vrms
Rectification Efficiency Measurement Circuit
Page 1 of 1
7/26/2012


Part Number 1N60P
Description SILICON SCHOTTKY BARRIER DIODE
Maker CHINA BASE
Total Page 1 Pages
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