Datasheet Details
| Part number | 12N10P |
|---|---|
| Manufacturer | CHONGQING PINGYANG |
| File Size | 525.99 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | |
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Overview: 12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE 12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability APPLICATION High.
SOP8L PIN CONFIGURATION The 12N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The 12N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current Reverse Diode dV/dt (Note 3) Operating Junction and Storage T
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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12N10 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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