• Part: 6N60
  • Description: N-CHANNEL MOSFET
  • Category: MOSFET
  • Manufacturer: CHONGQING PINGYANG
  • Size: 186.82 KB
Download 6N60 Datasheet PDF
CHONGQING PINGYANG
6N60
FEATURE - 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A - Low gate charge - Low Ciss - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode d V/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG Mounting Torque 6-32 or M3 screw 6N60 600 ±30 6 24 440 10.4 13 5.0 -55 to +150 10 1.1 UNIT A m J A m J V/ns ℃ ℃ lbf- in N- m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol Rth JC...