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CHONGQING PINGYANG

6N60 Datasheet Preview

6N60 Datasheet

N-CHANNEL MOSFET

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6N60(F,B,H)
6A mps,600 Volts N-CHANNEL MOSFET
FEATURE
6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
6N60
ITO-220AB
6N60F
TO-263
6N60B
TO-262
6N60H
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
6N60
600
±30
6
24
440
10.4
13
5.0
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25
Symbol
RthJC
PD
ITO-220
1.25
100
- 页码 -
TO-220
1
125
TO-262
TO-263
1
125
Units
/W
W
Rev. 14-1
http:// www.perfectway.cn




CHONGQING PINGYANG

6N60 Datasheet Preview

6N60 Datasheet

N-CHANNEL MOSFET

No Preview Available !

Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
VGS=0V,ID=250uA
Reference to 25℃,
/ΔTJ ID=250uA
Zero Gate Voltage Drain Current
IDSS VDS=600V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=3A
Dynamic Characteristics
Input Capacitance
Ciss VDS=25V,VGS=0V,
Output Capacitance
Coss f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on) VDD=300V,ID=6A,
Turn-On Rise Time
tr RG=25Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg VDS=480V,ID=6A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=6A,VGS=0V
Reverse Recovery Time
trr VGS=0V,IS=6A,
Reverse Recovery Charge
Qrr dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=24mH,Rg=25Ω,IAS=6A , TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
600
V
0.53 V/
- - 1 uA
- - 10 uA
- - -10 uA
24
- - 1.2
V
Ω
- - 1123 pF
- - 112 pF
- - 21 pF
20
70
40
45
22
4.9
9.4
ns
ns
ns
ns
nC
nC
nC
- - 6.0
- - 24
- - 1.4
290
2.35
A
A
V
ns
uC
- 页码 -
Rev. 14-1
http:// www.perfectway.cn


Part Number 6N60
Description N-CHANNEL MOSFET
Maker CHONGQING PINGYANG
PDF Download

6N60 Datasheet PDF






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