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7N60(F,B,H)
7A mps,600 Volts N-CHANNEL MOSFET
FEATURE
7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 7N60
ITO-220AB 7N60F
TO-263 7N60B
TO-262 7N60H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
7N60 600 ±30 7 28 550 7 54 5.