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2N7002 Datasheet Preview

2N7002 Datasheet

N-Channel MOSFET

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2N7002
60V N-Channel Enhancement Mode MOSFET
Features
Advanced trench process technology.
High density cell design for ultra low on-resistance.
• Very low leakage current in off condition.
Suffix "G" indicates Halogen-free part, ex.2N7002G.
Specially designed for battery operated system,
solid-state relays drivers, relays, displays, lamps,
solenoids, memories, etc.
In compliance with EU RoHS 2002/95/EC directives.
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Mounting Position : Any
Weight : Approximated 0.008 gram
Outline
SOT-23
0.020 (0.50)
0.015 (0.37)
D
Marking code
0.040 (1.02)
0.035 (0.89)
GS
.081(2.04)
.070(1.78)
0.120 (3.04)
0.110 (2.80)
Gate
0.044 (1.11)
0.035 (0.89)
Dimensions in inches and (millimeters)
Drain
Source
Maximum ratings
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
CONDITIONS
Symbol
2N7002
Marking Code
702
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
RGS = 1.0MΩ
-Continuous
-Non-repetitive
-Continuous(1)
Total device dissipation on FR-5 board(3)
-Pulsed(2)
Thermal resistance
Total device dissipation on Alumina substrate(4)
Thermal resistance
Operating junction and storage temperature
tp < 50us
TC = 25OC
TC = 100OC
TA = 25OC
TA = 25OC
Derate above 25OC
Junction to ambient
TA = 25OC
Derate above 25OC
Junction to ambient
Note: 1.The power dissipation of the package may result in a lower continuous drain current.
2.Pulse test : pulse width < 300us, duty cycle < 2.0%.
3.FR-5 = 1.0 x 0.75 x 0.062 in.
4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
VDSS
VDGR
VGSS
VGSM
ID
IDM
PD
RθJA
PD
RθJA
TJ, TSTG
60
60
±20
±40
±115
±75
±800
225
1.8
556
300
2.4
417
-55 ~ +150
UNIT
V
V
V
mA
mW
mW/OC
OC/W
mW
mW/OC
OC/W
oC
Document ID : DS-22M01
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C




CITC

2N7002 Datasheet Preview

2N7002 Datasheet

N-Channel MOSFET

No Preview Available !

2N7002
60V N-Channel Enhancement Mode MOSFET
Electrical characteristics
(AT TA=25oC unless otherwise noted)
PARAMETER
Gate-source leakage current
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
On-state drain current
Static drain-source on-state voltage
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-off delay time
Forward diode voltage
Source current continuous(body diode)
Source current pulsed
*Pules test : Pulse width < 300uS, duty cycle < 1%
CONDITIONS
VGS = ±20V
ID = 10uA, VGS = 0V
VDS = 60V, VGS = 0V
TJ = 25OC
TJ = 125OC
VDS = VGS, ID = 250uA
VDS > 2.0VD ,S(on) VGS = 10V
ID = 500mA, VGS = 10V
ID = 50mA, VGS = 5V
ID = 500mA, VGS = 10V, TC = 25OC
TC = 125OC
ID = 50mA, VGS = 5V, TC = 25OC
TC = 125OC
VDS > 2.0VDS( ,on) ID = 200mA
VDS = 25V, VGS = 0V, f = 1MHz
ID = 500mA, VDD = 25V, VGS = 10V
RG = 25Ω, RL = 50Ω
VGS = 0V, IS = 115mA
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
ID(on)
VDS(on)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
IS
ISM
MIN.
60
TYP. MAX.
±1.0
1.0
500
UNIT
uA
V
uA
1.0 1.6 2.0
V
500 mA
3.75
0.375
V
1.4 7.5
13.5
1.8 7.5
Ω
13.5
80
17 50
ms
10 25
pF
2.5 5.0
7 20
11 40
-1.5
-115
-800
ns
V
mA
mA
Document ID : DS-22M01
2 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C


Part Number 2N7002
Description N-Channel MOSFET
Maker CITC
PDF Download

2N7002 Datasheet PDF






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