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CITC

ES3GB Datasheet Preview

ES3GB Datasheet

Super Fast Rectifier

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Super Fast Rectifier
Chip Integration Technology Corporation
ES3AB THRU ES3MB
3 Amperes Surface Mount Super Fast Rectifiers
VOLTAGE : 50 TO 1000Volts
Features
• Low profile surface mounted application in order to
optimize board space.
• High current capability, low forward voltage drop.
• High surge capability.
• Superfast recovery time for switching mode application.
Glass passivated chip junction.
• Suffix "G" indicates Halogen free parts, ex. ΕS3ΑΒG.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Outline
SMB(DO-214AA)
0.08 7 (2.20 )
0.07 5 (1.90 )
0.18 9 (4.80 )
0.15 7 (4.00 )
0.15 7 (4.00 )
0.13 0 (3.30 )
0.012 (0.3 1)
MAX.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AA / SMB
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Weight : 0.003 ounce, 0.091 gram
0.09 8 (2.50 )
0.08 3 (2.10 )
0.06 3 (1.60 )
0.02 8 (0.70 )
0.22 0 (5.60 )
0.19 7 (5.00 )
0.008 (0.2 1)
MAX.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Making code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage
Operating Temperature
Symbol
VRRM
VRMS
VDC
VF
TJ
ES3AB
ES3A
50
35
50
ES3BB
ES3B
100
70
100
0.95
ES3DB ES3GB ES3JB
ES3D
200
ES3G
400
ES3J
600
140 280 420
200 400 600
1.25
-50 ~ +150
ES3KB ES3MB
ES3K ES3M
800 1000
560 700
800 1000
1.70
UNIT
V
V
OC
Parameter
Forward rectified current
Forward surge current
Reverse current
Maximum reverse recovery time
Typical thermal resistance
Typical junction capacitance
Conditions
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
IF = 0.5A, IR = 1.0A , IRR = 0.25A
Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
IR
Trr
RθJL
CJ
TYP.
10
45
MAX.
3.0
100
1.0
300
35
UNIT
A
A
uA
nS
OC/W
pF
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
1
Document ID : DS-12E34
Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B




CITC

ES3GB Datasheet Preview

ES3GB Datasheet

Super Fast Rectifier

No Preview Available !

Super Fast Rectifier
Chip Integration Technology Corporation
ES3AB THRU ES3MB
3 Amperes Surface Mount Super Fast Rectifiers
VOLTAGE : 50 TO 1000Volts
Rating and characteristic curves
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
10
3.0
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
3.6
3.0
2.4
1.8 Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
1.2
.3
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.03
0.6
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.003 .4
.6 .8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
100
80
60
40
20
0
1
TJ=25 C
8.3ms Single Half
Sine Wave
JEDEC method
5 10
NUMBER OF CYCLES AT 60Hz
50
100
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
|
|
|
|
|
|
|
|
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
http://www.citcorp.com.tw/
TEL:886-3-6565228
FAX:886-3-6565091
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
60
50
40
30
20
10
0
.01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100
Document ID : DS-12E34
2 Issued Date : 2010/05/05
Revised Date : 2010/10/08
Revision : B


Part Number ES3GB
Description Super Fast Rectifier
Maker CITC
PDF Download

ES3GB Datasheet PDF





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