900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CITC

M02N601D1 Datasheet Preview

M02N601D1 Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

M02N601D1
600V N-Channel General Purpose Switching Device Applications
Features
600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V.
100% avalanche, EAS tested.
Suffix "G" indicates Halogen-free part, ex.M02N601D1G.
Outline
TO-251
0.264(6.7)
0.248(6.3)
0.205(5.2)
0.189(4.8)
0.098(2.5)
0.083(2.1)
0.024(0.6)
0.016(0.4)
0.193(4.9)
0.181(4.6)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : JEDEC TO-251 molded plastic body over
passivated chip
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
GDS
0.035(0.90)
0.020(0.50)
0.091(2.30)TYP.
0.031(0.80)
0.016(0.40)
0.026(0.65)
0.014(0.35)
Drain
Gate
Source
Dimensions in inches and (millimeters)
Maximum ratings
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
CONDITIONS
Symbol
M02N601D1
Drain to source voltage
Gate-source voltage
Drain current-continue
-pulsed
Allowable power disspipation
PW < 10us, duty cycle < 1%
TC = 25OC
Derate above25OC
VDSS
VGSS
ID
IDP
PD
600
±30
2
8
31
0.25
Channel temperature
Storage thermal
Avalanche current(2)
Avalanche energy(single pulse)(1)
TCH
TSTG
I AV
EAS
150
-55 ~ +150
2
61
Note: 1.VDD = 50V, L = 20mH, IAV = 2A, RG = 25Ω.
2.Repetitive rating : pulse width limited by maximum junction temperature.
UNIT
V
A
W
W/OC
OC
OC
A
mJ
Document ID : DS-21M31
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C




CITC

M02N601D1 Datasheet Preview

M02N601D1 Datasheet

Silicon N-Channel Power MOSFET

No Preview Available !

M02N601D1
600V N-Channel General Purpose Switching Device Applications
Electrical characteristics
(AT TA=25oC unless otherwise noted)
PARAMETER
Drain-to-source breakdown voltage
Zero-gate voltage drain current
Gate-to-source leakage current
Cutoff voltage
Forward transfer admittance
Static drain-to-source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate source charge
Gate drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fail time
Diode forward voltage
CONDITIONS
ID = 250uA, VGS = 0V
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = VGS, ID = 250uA
VDS = 40V, ID = 1.0A
ID = 1.0A, VGS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDS = 25V, VGS = 0V, f = 1MHz
VDS = 25V, VGS = 0V, f = 1MHz
VDS = 480V, ID = 2.0A, VGS = 10V
VGS = 10V, VDD = 300V, ID = 2.0A
RGS = 25Ω
IS = 1.0A, VGS = 0V
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
l Yfs l
RDS(on)
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tr
td(off)
tf
VSD
MIN. TYP. MAX.
600
10
±100
24
1.0
4.0 5.0
356
31
4.0
9.5
2.3
4.7
11.5
14.3
23
8.3
1.4
UNIT
V
uA
nA
V
S
Ω
pF
pF
pF
nC
ns
V
Document ID : DS-21M31
2 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C


Part Number M02N601D1
Description Silicon N-Channel Power MOSFET
Maker CITC
Total Page 5 Pages
PDF Download

M02N601D1 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 M02N601D Silicon N-Channel Power MOSFET
CITC
2 M02N601D1 Silicon N-Channel Power MOSFET
CITC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy