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MBRF1045CT-D-J Datasheet Preview

MBRF1045CT-D-J Datasheet

10A High Power Schottky Barrier Rectifier

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Chip Integration Technology Corporation
MBRF1045CT-D-J
10A High Power Schottky Barrier Rectifiers
Main Product Characteristics
IF(AV)
VRWM
TJ
2 X 5A
45V
150OC
Features
Low forward voltage drop.
Excellent high temperature stability.
Fast switching capability.
Suffix "G" indicates Halogen-free part.
Lead free in compliance with EU RoHS.
Mechanical data
Epoxy : UL94V-0 rated flame retardant.
Case : JEDEC TO-220AB-J molded plastic body.
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Polarity: As marked.
Weight : Approximated 1.95 gram.
Outline
ITO-220AB-J
0.410(10.41)
0.390(9.91)
0.646(16.40)
0.606(15.40)
PIN
1 23
0.132(3.45)
0.124(3.15)
DIA
0.1 36( 3.45)
0.120(3.05)
0.056(1.43)
0.043(1.10)
0.056(1.43)
0.043(1.10)
0.037(0.93)
0.026(0.67)
0.104(2.64)
0.096(2.44)
0.192(4.89)
0.177(4.49)
0.270(6.85)
0.254(6.45)
45.0°
0.113(2.88)
0.090(2.28)
0.531(13.50)
0.492(12.50)
0.114(2.90)
0.984(2.50)
0.025(0.63)
0.015(0.37)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Circuit Diagram
PIN 1
PIN 2
PIN 3
Parameter
Working peak reverse voltage
Forward rectified current (total device)
Forward surge current (per diode)
Typical Thermal resistance(per diode)
Storage temperature
Operating Junction temperature
Conditions
Symbol
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VRWM
IO
IFSM
Junction to case
RθJC
Junction to Ambient
RθJA
TSTG
TJ
MBRF1045CT-D-J
45
10
125
2
50
-55 ~ +150
-55 ~ +150
UNIT
V
A
A
OC/W
OC/W
OC
OC
Parameter
Forward voltage drop (per diode)
Reverse current (per diode)
Reverse Breakdown Voltage (per diode)
Conditions
IF = 5A, TJ = 25OC
IF = 5A, TJ = 125OC
VR = 45V, TJ = 25OC
VR = 45V, TJ = 125OC
IR = 0.5mA, TJ = 25OC
1
Symbol MIN.
VF
IR
VBR
45
TYP.
MAX.
700
600
0.1
20
UNIT
mV
mA
V
Document ID : DS-11K239
Revised Date : 2019/08/05
Revision : C




CITC

MBRF1045CT-D-J Datasheet Preview

MBRF1045CT-D-J Datasheet

10A High Power Schottky Barrier Rectifier

No Preview Available !

Chip Integration Technology Corporation
MBRF1045CT-D-J
10A High Power Schottky Barrier Rectifiers
Rating and characteristic curves
Fig. 1 - Forward Characteristics
10
TA = 150oC
TA = 125oC
1
TA = 100oC
0.1
TA = 75oC
TA = 50oC
TA = 25oC
0.01
0
per diode
200
400
600
800
Instantaneous Forward Voltage, VF (mV)
Fig. 2 - Reverse Characteristics
100
10
1
0.1
0.01
0.001
0
TA = 150oC
TA = 125oC
TA = 100oC
TA = 75oC
TA = 50oC
TA = 25oC
per diode
10
20
30
40
50
Reverse Voltage, VR (V)
Fig. 3 - Forward Power Dissipation
7
6
5
4
3
2
1
per diode
0
0
2
4
6
8
10
Average Forward Current, IF (A)
Fig. 4 - Forward Current Derating Curve
6
5
4
3
2
1
per diode
0
0
25
50
75
100 125 150 175
Case Temperature, TC (oC)
Fig. 5 - Junction Capacitance
1000
100
10
per diode
1
0
5
10
15
20
Reverse Voltage, VR (V)
Document ID : DS-11K239
Revised Date : 2019/08/05
2
Revision : C



Part Number MBRF1045CT-D-J
Description 10A High Power Schottky Barrier Rectifier
Maker CITC
Total Page 3 Pages
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MBRF1045CT-D-J Datasheet PDF





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