MSG061P03G mosfet equivalent, p-channel enhancement mode mosfet.
* -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V
* HBM ESD protection level pass 8KV.
* 100% UIS+Rg tested.
* Reliable an.
DDDD
SS SG
PIN 1
DFN3.3x3.3-8(Saw-EP)
( 5,6,7,8 ) D D DD
(4) G
* Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Drain-Source Voltage
Continuous Drain Current(Note:2)
Pulsed Drain Current(Note:2) Ga.
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