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MSG061P03G Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: CITC

Overview: MSG061P03G P-Channel Enhancement Mode MOSFET ■.

Datasheet Details

Part number MSG061P03G
Manufacturer CITC
File Size 707.45 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet MSG061P03G-CITC.pdf

General Description

DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current(Note:2) Pulsed Drain Current(Note:2) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current(Note:2) Avalanche Current, single pulse (Note:1) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:1) L=0.5mH

Key Features

  • s.
  • -30V/-40A RDS(ON) = 6.1mΩ (max. ) @ VGS= -10V RDS(ON) = 11mΩ (max. ) @ VGS= -4.5V.
  • HBM ESD protection level pass 8KV.
  • 100% UIS+Rg tested.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant). Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

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