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MSQ108N06G Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: CITC

Overview: ■.

Datasheet Details

Part number MSQ108N06G
Manufacturer CITC
File Size 791.93 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet MSQ108N06G-CITC.pdf

General Description

DDDD SS SG DFN5x6-8 (5,6,7,8) DD DD Pin 1 (4) G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current Pulsed Drain Current(Note:1) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current Avalanche Current, single pulse (Note:2) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:2) L=0.5mH Maximum Power Dissipation Thermal Resistance-Junction to Ambient(Note:3) TC = 25OC TC = 100OC t ≤ 10s Steady State Operating and Storage Temperature Range Maximum Power Dissipation Continuous Drain Current Th

Key Features

  • s.
  • 60V/50A RDS(ON) = 10.8mΩ (max. ) @ VGS= 10V RDS(ON) = 13.5mΩ (max. ) @ VGS= 4.5V.
  • Reliable and Rugged.
  • Lead free and green device available (RoHS compliant).

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MSQ108N06G Distributor