SICD03C60 Description
SICD03C60 3A SiC Schottky Diode.
SICD03C60 Key Features
- Low Conduction and Switching Loss
- Positive Temperature Coefficient on Vf
- Temperature Independent Switching Behavior
- Fast Reverse Recovery
- High Surge Current Capability
- Pb-free lead plating
- Benefits
- Higher System Efficiency
- Parallel Device Convenience
- High Temperature Application