SICF08C60 Description
Chip Integration Technology Corporation SICF08C60 8A SiC Schottky Diode Main Product Characteristics IF(AV) VRRM TJ VF(Typ)25OC 8A, Tc=99OC 600V 175OC 1.45V Outline.
SICF08C60 Key Features
- Low Conduction and Switching Loss
- Positive Temperature Coefficient on VF
- Temperature Independent Switching Behavior
- Fast Reverse Recovery
- High Surge Current Capability
- Pb-free lead plating
- Benefits
- Higher System Efficiency
- Parallel Device Convenience
- High Temperature Application