SICF10C60 Description
Chip Integration Technology Corporation SICF10C60 10A SiC Schottky Diode Main Product Characteristics IF(AV) VRRM TJ VF(Typ)25OC 10A, Tc=76OC 600V 175OC 1.5V Outline.
SICF10C60 Key Features
- Low Conduction and Switching Loss
- Positive Temperature Coefficient on VF
- Temperature Independent Switching Behavior
- Fast Reverse Recovery
- High Surge Current Capability
- Pb-free lead plating
- Benefits
- Higher System Efficiency
- Parallel Device Convenience
- High Temperature Application