BFW10 – BFW11
N CHANNEL SILICON FETS
DESCRIPTION :
Symmetrical N-CHANNEL silicon planar epitaxial
junction field-effect transistors in TO72 metal
envelopes with the shield lead connected to the case.
They are designed for broad band amplifiers (0 to 300
MHz).
Their very low frequencies makes these devices very
suitable for differencial amplifiers, electro-medical and
nuclear detector preamplifiers.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDS
-VGSO
VDGO
IDS
IG
Ptot
Tstg
Tj
Drain-Source Voltage
Gate-Source Voltage (Open Drain)
Drain-Gate Voltage (Open Source)
Drain Current
Gate Current
Total Power Dissipation at Tamb = 25°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJA
Thermal Resistance, junction-ambient
Value
30
30
30
20
10
250
-65 to 175
175
Unit
V
V
V
mA
mA
mW
°C
°C
Value
590
Unit
K/W
19/08/2014
COMSET SEMICONDUCTORS
1/3
