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C3D16065D Datasheet Preview

C3D16065D Datasheet

Silicon Carbide Schottky Diode

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C3D16065D
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
Package
VRRM =
IF (TC=135˚C) =
Qc =
650 V
22 A**
40 nC**
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
C3D16065D
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Package
TO-247-3
Test Conditions
Marking
C3D16065
Note
VRRM
Repetitive Peak Reverse Voltage
650 V
VRSM
Surge Peak Reverse Voltage
650 V
VDC DC Blocking Voltage
IF
IFRM
IFSM
IFSM
Ptot
dV/dt
Continuous Forward Current (Per Leg/Device)
Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Non-Repetitive Peak Forward Surge Current
(Per Leg/Device)
Power Dissipation (Per Leg)
Diode dV/dt ruggedness
∫i2dt
i2t value (Per Leg)
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
650
23/46
11/22
8/16
37.5/75
25.5/51
71/142
60/120
650/1300
530/1080
100*
43.5*
200
25
18
-55 to
+175
1
8.8
V
TC=25˚C
A TC=135˚C
TC=150˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
V/ns VR=0-600V
A2s
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Fig. 3
Fig. 8
Fig. 8
Fig. 4
1 C3D16065D Rev. B, 7-2016




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C3D16065D Datasheet Preview

C3D16065D Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics (Per Leg)
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.5
2.1
10
12
Max.
1.8
2.4
51
204
Unit
V
μA
QC Total Capacitive Charge
20
C Total Capacitance
395
37
32
EC Capacitance Stored Energy
3.0
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
nC
pF
μJ
Test Conditions
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
1.5 *
0.75 **
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance (Per Leg)
20
18 TJ = -55 °C
16 TJ = 25 °C
14 TJ = 75 °C
12 TJ = 125 °C
10 TJ = 175 °C
8
6
4
2
0
0 2000.0 4000.5 6010.0 8010.5 1020.00 1220.50 3.0 3.5 4.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
30
25
20 TJ = 175 °C
15 TJ = 125 °C
TJ = 75 °C
10 TJ = 25 °C
TJ = -55 °C
5
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics
2 C3D16065D Rev. B, 7-2016


Part Number C3D16065D
Description Silicon Carbide Schottky Diode
Maker CREE
Total Page 6 Pages
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