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C3M0075120K Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

Overview: VDS 1200 V C3M0075120K ID @ 25˚C 30 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 75 mΩ N-Channel Enhancement.

C3M0075120K datasheet preview

Datasheet Details

Part number	C3M0075120K
Manufacturer	Cree (now Wolfspeed)
File Size	1.02 MB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0075120K-CREE.pdf

Key Features

Package.
C3MTM SiC MOSFET technology.
Optimized package with separate driver source pin.
8mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	C3M0075120K	Silicon Carbide Power MOSFET	Wolfspeed
	C3M0075120K-A	Silicon Carbide Power MOSFET	Wolfspeed
	C3M0075120K1	Silicon Carbide Power MOSFET	Wolfspeed
	C3M0075120D	Silicon Carbide Power MOSFET	Wolfspeed
	C3M0075120D-A	Silicon Carbide Power MOSFET	Wolfspeed

More Datasheets from Cree (now Wolfspeed)

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C3M0021120K	Silicon Carbide Power MOSFET
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C3M0032120K	Silicon Carbide Power MOSFET

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