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C3M0120100J Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

Overview: VDS 1000 V C3M0120100J ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement.

C3M0120100J datasheet preview

Datasheet Details

Part number	C3M0120100J
Manufacturer	Cree (now Wolfspeed)
File Size	777.92 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0120100J-CREE.pdf

Key Features

Package.
C3MTM SiC MOSFET technology.
Low parasitic inductance with separate driver source pin.
7mm of creepage distance between drain and source.
High blocking voltage with low On-resistance.
Fast intrinsic diode with low reverse recovery (Qrr).
Low output capacitance (60pF).
Halogen free, RoHS compliant Benefits.
Reduce switching losses and minimize gate ringing.
Higher system efficiency.
Redu.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	C3M0120100J	Silicon Carbide Power MOSFET	Wolfspeed
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