CAB450M12XM3 Description
VDS 1200 V CAB450M12XM3 IDS 450 A 1200V, 450A All-Silicon Carbide 5432 Conduction Optimized, Half-Bridge Module Technical.
CAB450M12XM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low Inductance (6.7 nH) Design
- Implements Conduction Optimized Third Generation SiC MOSFET Technology
- Silicon Nitride Insulator and Copper Baseplate