900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CREE

CMPA0060025F Datasheet Preview

CMPA0060025F Datasheet

GaN MMIC Power Amplifier

No Preview Available !

CMPA0060025F
25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be
achieved in a small footprint screw-down package.
PaPckNa:gCeMTPyApe0:076800002159F
Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C)
Parameter
Gain
Output Power @ PIN = 32 dBm
Power Gain @ PIN = 32 dBm
Efficiency @ PIN = 32 dBm
Note1: VDD = 50 V, IDQ = 500 mA
20 MHz
21.4
26.9
12.3
63
0.5 GHz
20.1
30.2
12.8
55
1.0 GHz
19.3
26.3
12.2
40
2.0 GHz
16.7
23.4
11.7
31
3.0 GHz
16.6
24.5
11.9
33
4.0 GHz
16.8
24.0
11.8
31
5.0 GHz
15.7
20.9
11.3
28
6.0 GHz
15.5
18.6
10.7
26
Units
dB
W
dB
%
Features
17 dB Small Signal Gain
25 W Typical PSAT
Operation up to 50 V
High Breakdown Voltage
High Temperature Operation
0.5” x 0.5” total product size
Applications
Ultra Broadband Amplifiers
Test Instrumentation
EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/wireless
Figure 1.
1




CREE

CMPA0060025F Datasheet Preview

CMPA0060025F Datasheet

GaN MMIC Power Amplifier

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
TS
τ
Thermal Resistance, Junction to Case
Case Operating Temperature2,3
RθJC
TC
Note:
1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
2 Measured for the CMPA0060025F at PIN = 32 dBm.
Rating
84
-10, +2
-65, +150
225
4
245
40
3.3
-40, +150
Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; TC = 25˚C)
Units
VDC
VDC
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
Characteristics
DC Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage2
V(GS)TH
-3.8
-3.0
-2.3
V VDS = 20 V, ∆ID = 20 mA
Gate Quiescent Voltage
V(GS)Q
-2.7
VDC
VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Saturated Drain Current
RF Characteristics1
IDC – 12 – A VDS = 12 V, VGS = 2.0 V
Power Output at POUT @ 4.5 GHz
POUT1
41.0
42.8
dBm
VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Power Output at POUT @ 5.0 GHz
POUT2
41.0
43.3
dBm
VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Power Output at POUT @ 6.0 GHz
POUT3
41.0
42.9
dBm
VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Drain Efficiency at POUT @ 4.5 GHz
η1
18.0
24.1
% VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Drain Efficiency at POUT @ 5.0 GHz
η2
18.0
28.0
% VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Drain Efficiency at POUT @ 6.0 GHz
Output Mismatch Stress
Small Signal RF Characteristics
Frequency
Min.
η3
VSWR
18.0
S21
Typ.
Max.
Min.
27.2
S11
Typ.
5:1
% VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
Y No damage at all phase angles,
VDD = 50 V, IDQ = 500 mA, PIN = 32 dBm
S22
Max.
Min.
Typ.
Max. Conditions
0.02 GHz - 0.25 GHz
18.0
19.3
23.7
-4.1 -2.5
-8.5 -4.5 VDD = 50 V, IDQ = 500 mA
0.25 GHz - 0.5 GHz
18.0
19.8
22.0
-6.8 -3.5
-8.9 -4.5 VDD = 50 V, IDQ = 500 mA
0.5 GHz - 1.0 GHz
15.5
18.6
22.0
-15.3
-6.5
-6.7 -4.5 VDD = 50 V, IDQ = 500 mA
1.0 GHz - 2.0 GHz
15.5
18.6
22.0
-15.3
-12.5
-6.7 -4.5 VDD = 50 V, IDQ = 500 mA
2.0 GHz - 3.0 GHz
13.0
18.6
20.0
-15.3
-12.5
-6.0 -2.5 VDD = 50 V, IDQ = 500 mA
3.0 GHz - 6.0 GHz
13.0
16.3
20.0
-14.2
-6.5
Notes:
1 POUT is defined as PIN = 32 dBm.
2 The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure.
-5.3 -2.5 VDD = 50 V, IDQ = 500 mA
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2 CMPA0060025F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CMPA0060025F
Description GaN MMIC Power Amplifier
Maker CREE
PDF Download

CMPA0060025F Datasheet PDF





Similar Datasheet

1 CMPA0060025F GaN MMIC Power Amplifier
CREE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy