CMPA0060025F Overview
CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power...
CMPA0060025F Key Features
- 17 dB Small Signal Gain
- 25 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
- 0.5” x 0.5” total product size
