Overview
The CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W, CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W consists of a photo transistor optically coupled to a gallium arsenide Infraredemitting diode in a 4-lead SOP Package. Package Outline Schematic CT Micro Proprietary & Confidential Page 1 CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W DC Input 4-Pin Long Mini-Flat Phototransistor Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters VISO Isolation voltage TOPR Operating temperature TSTG Storage temperature TSOL Soldering temperature Emitter IF Forward current IF(TRANS) Peak transient current (≤1μs P.W,300pps) VR Reverse voltage PD Power dissipation Detector PC Power dissipation BVCEO Collector-Emitter Breakdown Voltage BVECO Emitter-Collector Breakdown Voltage IC Collector Current Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient TJ Junction temperature Ratings 5000 -55 ~ +125 -55 ~ +150 260 50 1 6 85 150 80 7 50 Units VRMS oC oC oC Notes mA A V mW mW V V mA Ratings 445 125 Units ℃/W ℃ Notes CT Micro Proprietary & Confidential Page 2 CT1010-W, CT1011-W, CT1.
- High isolation 5000 VRMS
- CTR flexibility available see order information
- Extra low coupling capacitance
- DC input with transistor output
- Temperature range - 55 °C to 125 °C
- External creepage distance > 8 mm
- Internal creepage distance > 4.6 mm
- Distances through insulation > 0.4 mm
- Green Package
- Regulatory Approvals
