CT2300-R3 - N-Channel MOSFET

CT Micro

General Description

The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

Drain-Source Breakdown Voltage VDSS 20 V.
Drain-Source On-Resistance RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃.
Continuous Drain Current at TA=25 ID = 4.0A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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CT2300-R3 n-channel mosfet by CT Micro - Datasheet Preview

Datasheet Details

Part number	CT2300-R3
Manufacturer	CT Micro
File Size	2.02 MB
Description	N-Channel MOSFET
Datasheet	CT2300-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT2300-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃• Continuous Drain Current at TA=25 ID = 4.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Lithium Ion Battery Description The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .