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CT2301-R3 - P-Channel MOSFET

General Description

The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

  • Drain-Source Breakdown Voltage VDSS - 20 V.
  • Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃.
  • Continuous Drain Current at TA=25 ID = - 3.0A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CT2301-R3
Manufacturer CT Micro
File Size 1.98 MB
Description P-Channel MOSFET
Datasheet download datasheet CT2301-R3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃• Continuous Drain Current at TA=25 ID = - 3.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • Load Switch Description The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .