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CT2306-R3 - N-Channel MOSFET

General Description

The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.

Power Management DC-DC Converter Load Switch Package Outline Schematic Drai

Key Features

  • Drain-Source Breakdown Voltage VDSS 30 V.
  • Drain-Source On-Resistance.
  • RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃.
  • Continuous Drain Current at TA=25 ID = 4.7A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CT2306-R3
Manufacturer CT Micro
File Size 548.08 KB
Description N-Channel MOSFET
Datasheet download datasheet CT2306-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT2306-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance • RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃• Continuous Drain Current at TA=25 ID = 4.7A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.