CT Micro CT2321-R3
The CT2321-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . The power dissipation is limited by 150 junction temperature.| Part No. | CT2321-R3 |
|---|---|
| Datasheet | CT2321-R3 Download |
| Manufacturer |  CT Micro |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS - 20 V● Drain-Source On-Resistance RDS(ON) 42mΩ, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57mΩ, at VGS= - 2.5V, IDS= - 3.0A ℃● Continuous Drain Current at TA=25 ID = - 3.8A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
APPLICATIONS
● Power Management● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch Package Outline
DESCRIPTION
Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Oct, 2014 CT2321-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -20 ±12 -3.8 -15 1.25 -55 to 150 -55 to 150 Units V V A A...
