CT Micro CT3331-R3
The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . The power dissipation is limited by 150 junction temperature.| Part No. | CT3331-R3 |
|---|---|
| Datasheet | CT3331-R3 Download |
| Manufacturer |  CT Micro |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS - 200 V● Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,● Continuous Drain Current at TA=25 ID = - 0.4A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
● ESD Protection
APPLICATIONS
● Switches● Power supply circuits
● Motor controls
● Drivers
DESCRIPTION
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Oct, 2014 CT3331-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -200 ±20 -0.4 -1.6 1.1 -55 to 150 -55 to 150 Units V V A A...
