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CT3331-R3 - P-Channel MOSFET

General Description

The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

  • Drain-Source Breakdown Voltage VDSS - 200 V.
  • Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,.
  • Continuous Drain Current at TA=25 ID = - 0.4A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.
  • ESD Protection.

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Datasheet Details

Part number CT3331-R3
Manufacturer CT Micro
File Size 2.50 MB
Description P-Channel MOSFET
Datasheet download datasheet CT3331-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT3331-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 200 V • Drain-Source On-Resistance RDS(ON) 2.3Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4Ω, at VGS= - 4.5V, IDS= - 0.2A ℃,• Continuous Drain Current at TA=25 ID = - 0.4A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD Protection Applications • Switches • Power supply circuits • Motor controls • Drivers Description The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .