CT Micro CT3400-R3
The CT3400-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .| Part No. | CT3400-R3 |
|---|---|
| Datasheet | CT3400-R3 Download |
| Manufacturer |  CT Micro |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS 30 V● Drain-Source On-Resistance RDS(ON) 23.5mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.5mΩ, at VGS= 4.5V, IDS= 5.0A ℃● Continuous Drain Current at TA=25 ID = 5.8A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
APPLICATIONS
● Power Management● LED Display
● DC-DC System
● LCD Panel
DESCRIPTION
Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 6 Aug. 2015 CT3400-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings 30 ±12 5.8 15 1.4 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 175 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 6 Aug.
