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CT3400A-R3 - N-Channel MOSFET

General Description

The CT3400A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Key Features

  • Drain-Source Breakdown Voltage VDSS 30 V.
  • Drain-Source On-Resistance RDS(ON) 23.0mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.0mΩ, at VGS= 4.5V, IDS= 5.0A RDS(ON) 35mΩ, at VGS= 2.5V, IDS= 4.0A ℃.
  • Continuous Drain Current at TA=25 ID = 5.8A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CT3400A-R3
Manufacturer CT Micro
File Size 3.06 MB
Description N-Channel MOSFET
Datasheet download datasheet CT3400A-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT3400A-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance RDS(ON) 23.0mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.0mΩ, at VGS= 4.5V, IDS= 5.0A RDS(ON) 35mΩ, at VGS= 2.5V, IDS= 4.0A ℃• Continuous Drain Current at TA=25 ID = 5.8A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LED Display • DC-DC System • LCD Panel Package Outline Description The CT3400A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .