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CT8124-T52 - N-Channel MOSFET

General Description

The CT8124

T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .

Notebook High side switching Power Management Package Outline Schematic Drain

Key Features

  • Drain-Source Breakdown Voltage VDSS = 20V.
  • Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A.
  • Continuous Drain Current at TC=25℃ID = 9.0A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CT8124-T52
Manufacturer CT Micro
File Size 1.05 MB
Description N-Channel MOSFET
Datasheet download datasheet CT8124-T52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CT8124-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 20V  Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A  Continuous Drain Current at TC=25℃ID = 9.0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CT8124 –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .