CTD6006-T52 - N-Channel MOSFET

CT Micro

CTD6006-T52 Datasheet Preview — Preview of CTD6006-T52 PDF

Datasheet Details

Part number	CTD6006-T52
Manufacturer	CT Micro
File Size	2.01 MB
Description	N-Channel MOSFET
Datasheet	CTD6006-T52-CTMicro.pdf

CTD6006-T52 Product details

Description

The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Package Outline Schematic Drain Gate Source Drain Gate Source

Features

Drain-Source Breakdown Voltage VDSS 60V.
Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A.
Continuous Drain Current at TC=25℃, ID =35A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |