Datasheet4U Logo Datasheet4U.com

CTD6006-T52 - N-Channel MOSFET

General Description

The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Key Features

  • Drain-Source Breakdown Voltage VDSS 60V.
  • Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A.
  • Continuous Drain Current at TC=25℃, ID =35A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CTD6006-T52
Manufacturer CT Micro
File Size 2.01 MB
Description N-Channel MOSFET
Datasheet download datasheet CTD6006-T52 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CTD05076 Threshold Detector DAICO Industries
CTD100 Thyristor Diode Module ETC
CTD150 DC Relay YMTech
CTD27 Thyristor-Diode Modules DEE
CTD27GK08 Thyristor-Diode Modules DEE

Other Datasheets by CT Micro

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CTD6006-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-Resistance RDS(ON) 20m, at VGS= 10V, ID= 20A RDS(ON) 24m, at VGS= 4.5V, ID= 10A  Continuous Drain Current at TC=25℃, ID =35A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTD6006-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.