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CTH1706PS-T52 - P-Channel MOSFET

General Description

The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Switching Applications DC/DC Converter

Key Features

  • Drain-Source Breakdown Voltage VDSS-60V.
  • Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A.
  • Continuous Drain Current at TC=25℃ID =-17A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTH1706PS-T52
Manufacturer CT Micro
File Size 1.04 MB
Description P-Channel MOSFET
Datasheet download datasheet CTH1706PS-T52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTH1706PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-60V  Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A  Continuous Drain Current at TC=25℃ID =-17A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.