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CTH1706PS-T52 Datasheet - CT Micro

P-Channel MOSFET

CTH1706PS-T52 Features

* Drain-Source Breakdown Voltage VDSS-60V

* Drain-Source On-Resistance RDS(ON) 65m, at VGS= -10V, ID= -20A RDS(ON) 80m, at VGS= -4.5V, ID= -16A

* Continuous Drain Current at TC=25℃ID =-17A

* Advanced high cell density Trench Technology

* RoHS Compliance & Halogen Free Descript

CTH1706PS-T52 General Description

The CTH1706PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications * Switching Applications * DC/DC Converter

CTH1706PS-T52 Datasheet (1.04 MB)

Preview of CTH1706PS-T52 PDF

Datasheet Details

Part number:

CTH1706PS-T52

Manufacturer:

CT Micro

File Size:

1.04 MB

Description:

P-channel mosfet.

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TAGS

CTH1706PS-T52 P-Channel MOSFET CT Micro

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