CTH3506NS-T52 - N-Channel MOSFET

CT Micro

CTH3506NS-T52 Datasheet Preview — Preview of CTH3506NS-T52 PDF

Datasheet Details

Part number	CTH3506NS-T52
Manufacturer	CT Micro
File Size	959.44 KB
Description	N-Channel MOSFET
Datasheet	CTH3506NS-T52-CTMicro.pdf

CTH3506NS-T52 Product details

Description

The CTH3506NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. DC/DC Converter Power Management CCFL inverter Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 J

Features

Drain-Source Breakdown Voltage VDSS 60V.
Drain-Source On-Resistance RDS(ON) 17m, at VGS= 10V, ID= 30A.
Continuous Drain Current at TC=25℃ID =35.1A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

📁 CTH3506NS-T52 Similar Datasheet

CTHF2422 - Common Chokes (Central Technologies)
CTHF2430 - Common Chokes (Central Technologies)
CTHF2826 - Common Chokes (Central Technologies)
CTHF2836 - Common Chokes (Central Technologies)
CTHF2836F - Common Chokes (Central Technologies)
CTHFW2918F - SMD High Current Power Inductor (Central Technologies)

Other Datasheets by CT Micro

CTH3903NS-T52 - N-Channel MOSFET
CTH3904NS-T52 - N-Channel MOSFET
CTH10003NS-T52 - N-Channel MOSFET
CTH11055NS - N-Channel MOSFET
CTH1606NS-T52 - N-Channel MOSFET
CTH1706PS-T52 - P-Channel MOSFET

Published: May 20, 2020 |