CTH4106NS-T52 - N-Channel MOSFET

CT Micro

CTH4106NS-T52 Datasheet Preview — Preview of CTH4106NS-T52 PDF

Datasheet Details

Part number	CTH4106NS-T52
Manufacturer	CT Micro
File Size	1.04 MB
Description	N-Channel MOSFET
Datasheet	CTH4106NS-T52-CTMicro.pdf

CTH4106NS-T52 Product details

Description

The CTH4106NS T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications . Notebook High side switching Power Management Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS

Features

Drain-Source Breakdown Voltage VDSS = 60V.
Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A.
Continuous Drain Current at TC=25℃ID = 41A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |