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CTH4106NS-T52 - N-Channel MOSFET

General Description

The CTH4106NS

T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .

Notebook High side switching Power Management Package Outline Drain Gate

Key Features

  • Drain-Source Breakdown Voltage VDSS = 60V.
  • Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A.
  • Continuous Drain Current at TC=25℃ID = 41A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTH4106NS-T52
Manufacturer CT Micro
File Size 1.04 MB
Description N-Channel MOSFET
Datasheet download datasheet CTH4106NS-T52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTH4106NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 60V  Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A  Continuous Drain Current at TC=25℃ID = 41A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH4106NS –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications .